| Conţinutul numărului revistei |
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 SM ISO690:2012ABDURAKHMANOV, B., ИЛИЕВ, Х., ТАЧИЛИН, С., TOSHEV, A., ЭГАМБЕРДИЕВ, Б.. Влияние микрогетеропереходов кремний–германий на параметры кремниевых солнечных элементов. In: Электронная обработка материалов, 2010, nr. 5(46), pp. 124-126. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 5(46) / 2010 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 124-126 | ||||||
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It is established, that annealing at 850 °C the monocrystal silicon doped with germanium, reduce to the formation internal microheterojunctions Si/SiGe/Si, which enhancement of efficiency to 2,5 % of solar cells made on its basis. |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Abdurakhmanov, B.A.</dc:creator> <dc:creator>Iliev, K.M.</dc:creator> <dc:creator>Tachilin, S.A.</dc:creator> <dc:creator>Toshev, A.R.</dc:creator> <dc:creator>Egamberdiev, B.E.</dc:creator> <dc:date>2010-10-14</dc:date> <dc:description xml:lang='en'>It is established, that annealing at 850 °C the monocrystal silicon doped with germanium, reduce to the formation internal microheterojunctions Si/SiGe/Si, which enhancement of efficiency to 2,5 % of solar cells made on its basis.</dc:description> <dc:source>Электронная обработка материалов 46 (5) 124-126</dc:source> <dc:title>Влияние микрогетеропереходов кремний–германий на параметры кремниевых солнечных элементов</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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