Влияние микрогетеропереходов кремний–германий на параметры кремниевых солнечных элементов

Abdurakhmanov B.; Илиев Х.; Тачилин С.; Toshev A.; Эгамбердиев Б.

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672

SM ISO690:2012

ABDURAKHMANOV, B., ИЛИЕВ, Х., ТАЧИЛИН, С., TOSHEV, A., ЭГАМБЕРДИЕВ, Б.. Влияние микрогетеропереходов кремний–германий на параметры кремниевых солнечных элементов. In: Электронная обработка материалов, 2010, nr. 5(46), pp. 124-126. ISSN 0013-5739.

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Электронная обработка материалов

Numărul 5(46) / 2010 / ISSN 0013-5739 /ISSNe 2345-1718

Влияние микрогетеропереходов кремний–германий на параметры кремниевых солнечных элементов

Pag. 124-126

Abdurakhmanov B., Илиев Х., Тачилин С., Toshev A., Эгамбердиев Б.

Ташкентский государственный технический университет имени А.Р.Беруни

Disponibil în IBN: 30 martie 2017

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It is established, that annealing at 850 °C the monocrystal silicon doped with germanium, reduce to the formation internal microheterojunctions Si/SiGe/Si, which enhancement of efficiency to 2,5 % of solar cells made on its basis.

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