Afiliat la Universitatea de Stat din Moldova
Photoelectric properties of thin GaAs epitaxial layers grown by HVPE method |
Botnariuc Tamara , Gorceac Leonid , Covali Andrei , Cinic Boris , Raevschi Simion |
Materials Science and Condensed Matter Physics |
Editia 5. 2010. Chișinău, Republica Moldova. Institutul de Fizică Aplicată. 69-69. |
Disponibil online 15 April, 2021 |
MSP 21P Study of AlN layers grown on Si by HVPE method at the stage of nucleation |
Raevschi Simion , Compan Mihail , Zhilyaev Yurii , Gorceac Leonid , Botnariuc Vasile |
Materials Science and Condensed Matter Physics |
Editia 5. 2010. Chișinău, Republica Moldova. Institutul de Fizică Aplicată. 89-89. |
Disponibil online 15 April, 2021 |
The caracterization of the CdS-based solar cell heterojunctions |
Potlog Tamara , Botnariuc Vasile , Gorceac Leonid , Spalatu Nicolae , Maticiuc Natalia , Raevschi Simion |
Proceedings of the International Semiconductor Conference CAS |
Vol. 1. 2010. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 105-108. |
Disponibil online 12 December, 2023 |
Thin AIN films growth on Si (III) by hydride vapor phase epitaxy |
Raevschi Simion , Davîdov V. , Jiliaev Iu. , Gorceac Leonid , Botnariuc Vasile |
Moldavian Journal of the Physical Sciences |
Nr. 4(7) / 2008 / ISSN 1810-648X / ISSNe 2537-6365 |
Disponibil online 14 December, 2013 |
Polarization photosensitivity of GaN/Si heterojunctions |
Botnaryuk V. , Raevschi Simion , Belikov Vasylyj , Zhilyaev Yurii , Rud Yu. , Fedorov Leonid , Rud Vasily |
Semiconductors |
Vol. 33, / 1999 / ISSN 1063-7826 |
Disponibil online 16 October, 2023 |
Photoelectric properties of GaN/GaP heterostructures |
Botnaryuk V. , Raevschi Simion , Belikov Vasylyj , Zhilyaev Yurii , Rud Yu. , Fedorov Leonid , Rud Vasily |
Semiconductors |
Vol. 32, / 1998 / ISSN 1063-7826 |
Disponibil online 16 October, 2023 |
About the edge luminescence of cadmium sulphide thin layers grown on molybdenum |
Raevschi Simion , Gorceac Leonid , Coval Andrei , Chetruş Petru |
Proceedings of the International Semiconductor Conference CAS |
1995. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 283-286. |
Disponibil online 8 December, 2023 |
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