The thin layers used for manufacturing optoelectronic devices, including solar cells based on gallium arsenide can be obtained by several methods such as chemical method of gas phase deposition (MOCVD), chemical transport reactions method (HVPE), and mlecular epitaxy. The aim of the presented work was to obtain thin epitaxial layers (d<500 nm) by HNPE method for photovoltaic devices doped with n-type (Te) and p-type (Zn) impurities within a large concentration interval of charge carriers, and to study their photoelectric properties. GaAs epitaxial layers were grown in a horizontal quartz reactor at atmospheric pressure. There was used as carrier gas the double purified hydrogen, arsenic trichloride (AsCl3) (99.9997%), Ga (99.9997%), Te, and Zn (99.997%). Epitaxial layers were grown on GaAs:Cr substrates having the (100) crystallographic orientation and disoriented by (3...5) in the direction (110). The temperatures of growth of GaAs layers in the zone of deposition and that of source are respectively (700-750)°C and (800-810)°C. The linear velocity of H₂+AsCl³ flow in the zone of deposition is (30-35) cm/min. The layers were doped during the growth process in the temperature range (250..400°C of Te and Zn sources. In this temperature range at a background impurities concentration of 10¹⁵ cm-3 in the reactor, the charge carrier concentration values were (10¹⁶... 2·10¹⁹ ) cm-3 in layers doped with Te and (5·10¹⁵...10¹⁹) cm-3 for those doped with Zn. The measurements were performed at a standard installation of research of electro physical properties of semiconductor materials. The luminescent spectra were studied using the MDR-23 spectrometer. Photo luminescent excitation was performed with laser light (radiation of N2 vapours with λ = 0.337 μm) at about 3 kW pulse power and pulse duration of 10 ns. The radiation signal was recorded with the photo multiplicator ФЭУ-51 in a standard synchronous detection system. Measurements were made at liquid nitrogen temperature 77 K. In undoped layers with the concentration of charge carriers n = 10¹⁵ cm^-3 the photo luminescent spectrum results in a single excitonic maximum D_x ⁰ bound to neutral donor with the peak at 1.509 eV. In Zn doped layers with the concentration of charge carriers p = 8·10¹⁸ cm^-3 the photo luminescent spectrum has the Ax 0 maximum at 1.484 eV and corresponds to an exciton bound to neutral acceptor. For layers doped with Te having the concentration of charge carriers n = 2·10¹⁸ cm^-3 there is a single maximum at 1484 eV.