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| Ultima descărcare din IBN: 2020-03-10 16:33 |
 SM ISO690:2012RAEVSCHI, Simion, DAVÎDOV, Valerii, GORCEAC, Leonid, BOTNARIUC, Vasile, ZHILYAEV, Yurii. Obţinerea straturilor aln pe si prin metoda hvpe şi cercetarea proprietăţilor lor. In: Studia Universitatis Moldaviae (Seria Ştiinţe Reale şi ale Naturii), 2008, nr. 2(12), pp. 217-220. ISSN 1814-3237. |
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| Studia Universitatis Moldaviae (Seria Ştiinţe Reale şi ale Naturii) | ||||||
| Numărul 2(12) / 2008 / ISSN 1814-3237 /ISSNe 1857-498X | ||||||
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| Pag. 217-220 | ||||||
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AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studied
by using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Raman
spectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers are
mechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics). |
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