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 SM ISO690:2012POKATILOV, Evghenii, NIKA, Denis, BALANDIN, Alexander A.. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves. In: Applied Physics Letters, 2006, vol. 89, p. 0. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.2349302 |
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  Applied Physics Letters |
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| Volumul 89 / 2006 / ISSN 0003-6951 /ISSNe 1077-3118 | ||||||
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| DOI:https://doi.org/10.1063/1.2349302 | ||||||
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The authors show that the electron mobility can be strongly enhanced in AlN/GaN/AlN heterostructures with the shallow In xGa 1-xN channel - nanogroove - in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x≈0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron - interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10 11-10 13 cm -2), which is important for GaN technology. |
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| Cuvinte-cheie Aluminum nitride, Carrier concentration, Electron mobility, Electron scattering, Gallium nitride, Semiconducting indium compounds, Semiconductor quantum wells |
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