Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

Pokatilov Evghenii; Nika Denis; Balandin Alexander A.

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POKATILOV, Evghenii, NIKA, Denis, BALANDIN, Alexander A.. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves. In: Applied Physics Letters, 2006, vol. 89, p. 0. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.2349302

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Applied Physics Letters

Volumul 89 / 2006 / ISSN 0003-6951 /ISSNe 1077-3118

Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

DOI:https://doi.org/10.1063/1.2349302

Pag. 0-0

Pokatilov Evghenii¹², Nika Denis¹, Balandin Alexander A.¹

¹ University of California, Riverside,
² Moldova State University

Disponibil în IBN: 16 iunie 2023

Rezumat

The authors show that the electron mobility can be strongly enhanced in AlN/GaN/AlN heterostructures with the shallow In _xGa _1-xN channel - nanogroove - in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x≈0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron - interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10 ¹¹-10 ¹³ cm ^-2), which is important for GaN technology.

Cuvinte-cheie
Aluminum nitride, Carrier concentration, Electron mobility, Electron scattering, Gallium nitride, Semiconducting indium compounds, Semiconductor quantum wells

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<dc:creator>Pocatilov, E.P.</dc:creator>
<dc:creator>Nica, D.L.</dc:creator>
<dc:creator>Balandin, A.</dc:creator>
<dc:date>2006-09-11</dc:date>
<dc:description xml:lang='en'><p>The authors show that the electron mobility can be strongly enhanced in AlN/GaN/AlN heterostructures with the shallow In&nbsp;<sub>x</sub>Ga&nbsp;<sub>1-x</sub>N channel - nanogroove - in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x&asymp;0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron - interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10&nbsp;<sup>11</sup>-10&nbsp;<sup>13</sup>&nbsp;cm&nbsp;<sup>-2</sup>), which is important for GaN technology.&nbsp;</p></dc:description>
<dc:identifier>10.1063/1.2349302</dc:identifier>
<dc:source>Applied Physics Letters  () 0-0</dc:source>
<dc:subject>Aluminum nitride</dc:subject>
<dc:subject>Carrier concentration</dc:subject>
<dc:subject>Electron mobility</dc:subject>
<dc:subject>Electron scattering</dc:subject>
<dc:subject>Gallium nitride</dc:subject>
<dc:subject>Semiconducting indium compounds</dc:subject>
<dc:subject>Semiconductor quantum wells</dc:subject>
<dc:title>Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves</dc:title>
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