Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
137 0 |
SM ISO690:2012 POKATILOV, Evghenii, NIKA, Denis, BALANDIN, Alexander A.. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves. In: Applied Physics Letters, 2006, vol. 89, p. 0. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.2349302 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Applied Physics Letters | ||||||
Volumul 89 / 2006 / ISSN 0003-6951 /ISSNe 1077-3118 | ||||||
|
||||||
DOI:https://doi.org/10.1063/1.2349302 | ||||||
Pag. 0-0 | ||||||
|
||||||
Rezumat | ||||||
The authors show that the electron mobility can be strongly enhanced in AlN/GaN/AlN heterostructures with the shallow In xGa 1-xN channel - nanogroove - in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x≈0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron - interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10 11-10 13 cm -2), which is important for GaN technology. |
||||||
Cuvinte-cheie Aluminum nitride, Carrier concentration, Electron mobility, Electron scattering, Gallium nitride, Semiconducting indium compounds, Semiconductor quantum wells |
||||||
|
Google Scholar Export
<meta name="citation_title" content="Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves"> <meta name="citation_author" content="Pokatilov Evghenii"> <meta name="citation_author" content="Nika Denis"> <meta name="citation_author" content="Balandin Alexander A."> <meta name="citation_publication_date" content="2006/09/11"> <meta name="citation_journal_title" content="Applied Physics Letters"> <meta name="citation_pdf_url" content="https://pubs.aip.org/aip/apl/article-abstract/89/11/112110/143189/Electron-mobility-enhancement-in-AlN-GaN-AlN?redirectedFrom=fulltext">