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SM ISO690:2012

Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching

Diaz-Guerra Carlos1, Piqueras Javier1, Popa Veaceslav23, Cojocaru Ala3, Tighineanu Ion32

2 Institute of Applied Physics, Academy of Sciences of Moldova, 3 Technical University of Moldova

Applied Physics Letters

Nr. / 2005 / ISSN 0003-6951

Disponibil online 12 April, 2018. Descarcări-0. Vizualizări-703

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Electrical and photoelectrical properties of glassy As2Se3 doped with Mn, Dy and Sm

Iovu Mihail, Andrieş Andrei, Shutov Serghei, Bulgaru M., Popescu Mihai A., Sava Florinel, Lorinczi Adam

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 1996. New Jersey. DOI 10.1109/SMICND.1996.

Disponibil online 7 December, 2023. Descarcări-0. Vizualizări-99

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Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures

Popa Veaceslav1, Volciuc Olesea1, Tighineanu Ion12

1 Technical University of Moldova, 2 Institute of Applied Physics, Academy of Sciences of Moldova

Physica Status Solidi (A) Applied Research

Nr. / 2004 / ISSN 0031-8965 /ISSNe 1521-396X

Disponibil online 13 April, 2018. Descarcări-0. Vizualizări-593

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Photoelectric properties of ZnTe-CdSe and CdSe-ZnTe thin films heterojunctions

Ghimpu Lidia

Moldova State University

Proceedings of the International Semiconductor Conference

Vol. 1. 1999. New Jersey. DOI 10.1109/SMICND.1999.

Disponibil online 1 December, 2023. Descarcări-0. Vizualizări-102

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Atomic structure and electron transport properties of glassy As2Se3:Snx

Andrieş Andrei, Popescu Mihai A., Iovu Mihail, Verlan Victor, Shutov Serghei, Bulgaru M., Colomeico Eduard, Malcov S., Leonovici Minola Rodica, Mihai V., Şteflea Mioara, Zamfira Sorin Constantin

Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

1995. New Jersey. DOI 10.1109/SMICND.1995.

Disponibil online 8 December, 2023. Descarcări-0. Vizualizări-88

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Investigation of some photoelectric and luminescence properties of gamma La2S3 single crystals

Georgobiani Anatoly1, Glushkov Mikhail2, Kamarzin A.3, Logozinskaya E.4, Malovitskii Yu.4, Pukhlii Zh.4, Sokolov Vladimir5, Tighineanu Ion6, Schcherbakov I.6

2 Prokhorov General Physics Institute RAS, 3 Nikolaev Institute of Inorganic Chemistry SB RAS, 4 P. N. Lebedev Physical Institute of RAS, 5 L.V. Kirensky Institute of Physics, Krasnoyarsk, 6 Technical University of Moldova

Soviet journal of quantum electronics

Nr. / 1982 / ISSN 0049-1748

Disponibil online 2 February, 2024. Descarcări-0. Vizualizări-65

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Photoelectrochemical solar cells on the base of multinary layered semiconductors

Ţiuleanu Ion, Simaşchevici Alexei, Sprincean Ala

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 2. 1998. New Jersey. DOI 10.1109/SMICND.1998.732248.

Disponibil online 1 December, 2023. Descarcări-0. Vizualizări-99

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