Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
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DÌAZ-GUERRA, Carlos; PIQUERAS, Javier; POPA, Veaceslav; COJOCARU, Ala; TIGINYANU, Ion. Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching. In: Applied Physics Letters. 2005, nr. 22(86), pp. 1-3. ISSN 0003-6951.
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Applied Physics Letters
Numărul 22(86) / 2005 / ISSN 0003-6951

Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching


DOI: 10.1063/1.1940734
Pag. 1-3

Dìaz-Guerra Carlos1, Piqueras Javier1, Popa Veaceslav23, Cojocaru Ala3, Tiginyanu Ion32
 
1 Universidad Complutense de Madrid,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Technical University of Moldova
 
Disponibil în IBN: 12 aprilie 2018


Rezumat

The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence (CL) in the scanning electron microscope. Columnar structures with diameters of 150-250 nm formed near the surface of the as-grown GaN layers branch into nanowires with diameters of 20-60 nm, while islands with coral-like relief were observed at the bottom of the etched areas. CL emission of the observed nanostructures is dominated by free electron to acceptor transitions. Local CL spectra provide direct evidence of the existence of either compressive or tensile stress in different nanostructures. No free exciton luminescence was observed in GaN nanowires, supporting their relation to threading dislocations.

Cuvinte-cheie
atomic force microscopy, etching, Nucleation, Scanning tunneling microscopy,

cathodoluminescence, Electron beams, Evaporators, Nanostructured materials, Nickel compounds, Photoelectricity