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SM ISO690:2012

Spectroscopic ellipsometry study of Cu2ZnSnSe4 bulk crystals

Leon Maximo1, Levcenco Sergiu2, Serna Rosalia3, Bodnar Ivan4, Nateprov Alexandr5, Guc Maxim5, Gurieva Galina2, Lopez Nair1, Merino Jose Manuel1, Caballero Raquel1, Schorr Susan26, Perez-Rodriguez Alejandro78

4 Belarusian State University of Informatics and Radioelectronics, 5 Institute of Applied Physics, Academy of Sciences of Moldova, 6 Free University of Berlin, Germany, 8 University of Barcelona

Applied Physics Letters

Nr. / 2014 / ISSN 0003-6951

Disponibil online 17 June, 2023. Descarcări-0. Vizualizări-128

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Influence of the stresses of predeformed InP crystals on acoustic emission under microindentation

Jitaru Raisa, Rahvalov Veaceslav

Academy of Sciences of Moldova

Proceedings of SPIE - The International Society for Optical Engineering

Ediția 6, Vol.4068. 2000. Bellingham, Washington. ISSN 0277-786X.

Disponibil online 6 February, 2024. Descarcări-0. Vizualizări-77

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Optical constants of Cu2ZnGeS4 bulk crystals

Leon Maximo1, Levcenco Sergiu2, Serna Rosalia3, Gurieva Galina2, Nateprov Alexandr2, Merino Jose Manuel1, Friedrich Kernahan Eberhardt Josue1, Fillat Ursula1, Schorr Susan4, Aruşanov Ernest12

2 Institute of Applied Physics, Academy of Sciences of Moldova, 4 Free University of Berlin, Germany

Journal of Applied Physics

Nr. / 2010 / ISSN 0021-8979 /ISSNe 1089-7550

Disponibil online 6 November, 2023. Descarcări-0. Vizualizări-99

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Raman and Hall-effect characterization of Zn+/P+ co-implanted GaAs subjected to rapid thermal annealing

Ursachi Veaceslav, Terletsky Andrei, Tighineanu Ion

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 1998. New Jersey. DOI 10.1109/SMICND.1998.732248.

Disponibil online 6 December, 2023. Descarcări-0. Vizualizări-137

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Mecanisms of photoconductivity decay in bulk and porous InP

Călin Mircea

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 2. 2001. New Jersey. .

Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-102

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Colour cathodoluminescence from bi4[ge04]3 crystals

Nazarova Tatiana1, Nazarov Mihail1, Saparin Gennadii2, Obyden Sergey2

1 Technical University of Moldova, 2 Lomonosov Moscow State University

Radiation Effects and Defects in Solids

Nr. / 1995 / ISSN 1042-0150 /ISSNe 1029-4953

Disponibil online 12 February, 2024. Descarcări-0. Vizualizări-40

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Artificial birefringence introduced by porosity in GaP

Ursachi Veaceslav1, Sîrbu Nicolae2, Albu Sergiu2, Zalamai Victor1, Tighineanu Ion12, Boyd Robert W.3

1 Institute of Applied Physics, Academy of Sciences of Moldova, 2 Technical University of Moldova,

Semiconductor Science and Technology

Nr. / 2005 / ISSN 0268-1242

Disponibil online 12 April, 2018. Descarcări-0. Vizualizări-627

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Raman scattering analysis of InGaAs/InP: Effect of rare earth (Dysprosium) addition during liquid phase epitaxial growth

Tighineanu Ion, Ursachi Veaceslav, Podor Balint, Csontos L., Şontea Victor

Academy of Sciences of Moldova

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Ediţia 8. 1996. New Jersey. ISSN 10928669.

Disponibil online 25 January, 2024. Descarcări-0. Vizualizări-69

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Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

Tighineanu Ion, Miao Jianmin, Hartnagel Hans Ludwig, Rueck Dorothee M., Tinschert Klaus, Ursachi Veaceslav, Ichizli V.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Ediţia 8. 1996. New Jersey. ISSN 10928669.

Disponibil online 25 January, 2024. Descarcări-0. Vizualizări-85

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