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 SM ISO690:2012TIGINYANU, Ion, MIAO, Jianmin, HARTNAGEL, Hans Ludwig, RUECK, Dorothee M., TINSCHERT, Klaus, URSACHI, Veaceslav, ICHIZLI, V.. Raman and electrical characterization of n-InP implanted by 630-keV nitrogen. In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Ed. 8, 21-25 aprilie 1996, New Jersey. New Jersey: Institute of Electrical and Electronics Engineers Inc. (IEEE), 1996, Ediţia 8, pp. 598-601. ISSN 10928669. DOI: https://doi.org/10.1109/ICIPRM.1996.492319 |
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| Conference Proceedings - International Conference on Indium Phosphide and Related Materials Ediţia 8, 1996 |
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Conferința "8th International Conference on Indium Phosphide and Related Materials" 8, New Jersey, Statele Unite ale Americii, 21-25 aprilie 1996 | ||||||
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| DOI:https://doi.org/10.1109/ICIPRM.1996.492319 | ||||||
| Pag. 598-601 | ||||||
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The peculiarities of lattice disorder and conductivity compensation caused by 630-keV N+-implantation in liquid encapsulated Czochralski grown n-InP single crystals were studied and the ion-induced damage of the lattice was probed by resonant Raman scattering measurements. Layers with resistivity as high as 104 Ω·cm were formed by implantation and subsequent annealing of the samples allowed the fabrication of InP membranes for sensor applications by using selective electrochemical etching techniques. |
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| Cuvinte-cheie Annealing, Crystal growth from melt, Crystal lattices, Electric conductivity, electrochemistry, etching, ion implantation, Nitrogen, Raman scattering, Semiconductor device manufacture, single crystals |
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