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 SM ISO690:2012URSACHI, Veaceslav, TERLETSKY, Andrei, TIGINYANU, Ion. Raman and Hall-effect characterization of Zn+/P+ co-implanted GaAs subjected to rapid thermal annealing. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 21, 6-10 octombrie 1998, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1998, Vol. 1, pp. 97-100. DOI: https://doi.org/10.1109/SMICND.1998.732294 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1998 |
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Conferința "International Semiconductor Conference" 21, Sinaia, Romania, 6-10 octombrie 1998 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1998.732294 | ||||||
| Pag. 97-100 | ||||||
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It is shown that Zn+/P+ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.1019 cm-3 and narrow impurity profile within 0.15 μm. |
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| Cuvinte-cheie Crystal growth from melt, Hall effect, ion implantation, Raman scattering, Rapid thermal annealing |
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