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SM ISO690:2012

Raman and Hall-effect characterization of Zn+/P+ co-implanted GaAs subjected to rapid thermal annealing

Ursachi Veaceslav, Terletsky Andrei, Tighineanu Ion

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 1998. New Jersey. DOI 10.1109/SMICND.1998.732248.

Disponibil online 6 December, 2023. Descarcări-0. Vizualizări-130

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Photoluminescence of chemical bath deposited ZnO:Al films treated by rapid thermal annealing

Şişianu Sergiu1, Lupan Oleg1, Monaico Eduard1, Ursachi Veaceslav2, Şişianu Teodor1, Tighineanu Ion12

1 Technical University of Moldova, 2 Institute of Applied Physics, Academy of Sciences of Moldova

Thin Solid Films

Nr. 1-2(488) / 2005 / ISSN - /ISSNe 0040-6090

Disponibil online 12 April, 2018. Descarcări-0. Vizualizări-662

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