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 SM ISO690:2012TSIULYANU , Dumitru, MARIAN, Svetlana, GUBA, M., POTJE-KAMLOTH, Karin, LIESS, Hans Dieter. New propylamine sensor using artificial dimorphite. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 21, 6-10 octombrie 1998, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1998, Vol. 1, pp. 75-78. DOI: https://doi.org/10.1109/SMICND.1998.732282 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1998 |
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Conferința "International Semiconductor Conference" 21, Sinaia, Romania, 6-10 octombrie 1998 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1998.732282 | ||||||
| Pag. 75-78 | ||||||
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The sandwich metal-dimorphite(As4S3)-metal structure is used as a sensor for detection propylamine (PrNH2) vapor. The gas induced shifts of the current-voltage characteristics as well as transient characteristics of gas-induced current are studied with respect of morphology of dimorphite films. Propylamine vapor lead to increasing of current i.e. has a doping effect. Sensitivity dependence on applied voltage and on gas concentration is found. Results are discussed in themes of gas controlled trapping of injected from electrodes carries which influence the space charge limited current (SCLC). |
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| Cuvinte-cheie Current voltage characteristics, Electric space charge, morphology, Semiconducting films |
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