Structural and optical properties of composites containing AIIBVI and  AIIBVI semiconductors
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537.311.322+539.19 (1)
Electricitate curentă. Curent electric. Electrocinetică (55)
Fizică nucleară. Fizică atomică. Fizică moleculară (62)
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EVTODIEV, Igor; UNTILA, Dumitru; EVTODIEV, Silvia; CARAMAN, Iuliana; GASHIN, P.; DMITROGLO, Liliana; ROTARU, Irina; KANTSER, Valeriu. Structural and optical properties of composites containing AIIBVI and  AIIBVI semiconductors. In: Moldavian Journal of the Physical Sciences. 2017, nr. 3-4(16), pp. 219-226. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 3-4(16) / 2017 / ISSN 1810-648X /ISSNe 2537-6365

Structural and optical properties of composites containing AIIBVI and  AIIBVI semiconductors


CZU: 537.311.322+539.19
Pag. 219-226

Evtodiev Igor12, Untila Dumitru21, Evtodiev Silvia1, Caraman Iuliana3, Gashin P.1, Dmitroglo Liliana1, Rotaru Irina1, Kantser Valeriu12
 
1 State University of Moldova,
2 Ghitu Institute of Electronic Engineering and Nanotechnology of the Academy of Sciences of Moldova,
3 “Vasile Alecsandri” University of Bacau
 
Disponibil în IBN: 1 februarie 2019


Rezumat

By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.