Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor
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SPRINCEAN, Veaceslav, LUPAN, Oleg, CARAMAN, Iuliana, UNTILA, Dumitru, POSTICA, Vasile, COJOCARU, Ala, GAPEEVA, Anna, PALACHI, Leonid, ADELUNG, Rainer, TIGINYANU, Ion, CARAMAN, Mihail. Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor. In: Materials Science in Semiconductor Processing, 2021, vol. 121, pp. 1-9. ISSN 1369-8001. DOI: https://doi.org/10.1016/j.mssp.2020.105314
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Materials Science in Semiconductor Processing
Volumul 121 / 2021 / ISSN 1369-8001 /ISSNe 1873-4081

Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor

DOI: https://doi.org/10.1016/j.mssp.2020.105314
CZU: 538.9+621.38+546

Pag. 1-9

Sprincean Veaceslav1, Lupan Oleg23, Caraman Iuliana4, Untila Dumitru14, Postica Vasile3, Cojocaru Ala5, Gapeeva Anna2, Palachi Leonid6, Adelung Rainer2, Tiginyanu Ion37, Caraman Mihail1
 
1 Moldova State University,
2 Christian-Albrechts University of Kiel,
3 Technical University of Moldova,
4 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
5 Phi-Stone AG, Kiel,
6 Free International University of Moldova,
7 Academy of Sciences of Moldova
 
Proiect:
15.817.02.34A Dispozitive optoelectronice şi de înregistrare a informaţiei optice obţinute pe bază de materiale semiconductoare multifuncţionale şi de structuri nanolamelare
GA 810652

Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning


20.80009.5007.09 Elaborarea și lansarea seriei de nanosateliți cu misiuni de cercetare de pe Stația Spațială Internațională, monitorizarea, postoperarea lor și promovarea tehnologiilor spațiale
 
Disponibil în IBN: 24 septembrie 2020


Rezumat

In this work, the β-Ga2O3 nanostructures were obtained by thermal annealing in air of β-Ga2S3 single crystals at relatively high temperatures of 970 K, 1070 K and 1170 K for 6 h. The structural, morphological, chemical and optical properties of β-Ga2O3–β-Ga2S3 layered composites grown at different temperatures were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) as well as photoluminescence spectroscopy (PL) and Raman spectroscopy. The results show that the properties of obtained β-Ga2O3–β-Ga2S3 composites were strongly influenced by the thermal annealing temperature. The XRD and Raman analyses confirmed the high crystalline quality of the formed β-Ga2O3 nanostructures. The absorption edge of the oxide is due to direct optical transitions. The optical bandwidth was estimated to be approximately 4.34-4.41 eV, depending on the annealing temperature. Annealing of the β-Ga2S3 monocrystals at a higher temperature of 1170 K showed the complete conversion of the surface to β-Ga2O3. These results demonstrate the possibility to grow high quality β-Ga2O3–β-Ga2S3 layered composites and β-Ga2O3 nanostructures in large quantities for various applications such as gas sensing, non-toxic biomedical imaging, nonlinear optical, as well as power device applications. Micro and nanocrystallites present on the surface of the Ga2O3 layer contribute to a diffusion of the incident light which leads to an increase of the absorption rate allowing thus to reduce the thickness of the Ga2O3 layer, in which the generation of unbalanced charge carriers takes place. By decreasing the Ga2O3 layer thickness in such layered composites, the efficiency of photovoltaic cells based on such junctions can be increased.

Cuvinte-cheie
Crystalline β-Ga2S3, Gallium oxide, scanning electron microscopy, Semiconductorβ-, Ga2O3/Ga2S3