The CdTe-GaTe lamellar microcrystalline composite was obtained by thermal treatment in the temperature range from 623K to 833 K of mono-crystalline p-GaTe with the concentration of holes of (1.5-3.0)*10¹⁴ cm^-3. The concentration of CdTe crystallites increases when the temperature of thermal treatment of GaTe lamellas increases. The CdTe layers forms on the outer surface of lamellas as well as inside the samples due to intercalation process of Cd atoms between layered packaging of Te-Ga-Ga-Te type. The edge of absorption band of GaTe-CdTe composite obtained at the temperature of 650K is determined by absorption process in CdTe crystallites. The width of direct bandgap at the temperature of 300K of GaTe crystals from composite is equal to 1.54 eV. The band with a maximum at (1.37-1.42) eV prevails in the photoluminescence (PL) spectrum at the temperature of 78K of CdTe-GaTe composite. This is characteristic to CdTe crystals with own structural defects. The activation energy of this band is equal to 0.14 eV.