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Ultima descărcare din IBN: 2018-05-31 23:08 |
SM ISO690:2012 EVTODIEV, Igor. Dispozitive fotoelectronice pe bază de GaSe stratificat. In: Studia Universitatis Moldaviae (Seria Ştiinţe Reale şi ale Naturii), 2009, nr. 1(21), pp. 203-207. ISSN 1814-3237. |
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Studia Universitatis Moldaviae (Seria Ştiinţe Reale şi ale Naturii) | ||||||
Numărul 1(21) / 2009 / ISSN 1814-3237 /ISSNe 1857-498X | ||||||
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Pag. 203-207 | ||||||
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In this work photosensors based on CaSe specially undoped and doped with Cu (0.05% at. – 0.50%at.) are characterized
at normal temperature using the electric photoconductivity spectrums. Photoresistors based on monocrystalline
GaSe fi lms are photosensible in the energy interval from 1.8eV to 5.2eV. Polarization sensibility of the GaSe, GaSe:Cu
(0.5%at) photoresistors was specially investigated at every circularly polarized wave length. Are raised the curves of
relaxation of the photocurrent through the GaSe and GaSe with 0.1%at of Cu samples with light impulses with a duration
of ~1.2·10-6 s. In the absence of X radiation characteristics I-U for roentgen resistors of GaSe |
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