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SM ISO690:2012 HAJDEU-CHICAROS, Elena. Electrical properties of Cu2ZnGeS4 single crystals. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 107. |
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Materials Science and Condensed Matter Physics Editia 7, 2014 |
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Conferința "Materials Science and Condensed Matter Physics" 7, Chișinău, Moldova, 16-19 septembrie 2014 | |||||||
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Pag. 107-107 | |||||||
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The Cu2ZnGeS4 (CZGS) quatemaiy compound is promising for photovoltaic application as an absorber layer of low-cost thin film solar cells. It has a p-type of electrical conductivity and a high abso1ption coefficient [ 1]. Single c1ystals of CZGS were grown by chemical vapor transpo1t using iodine as a transpo1t agent. The temperature dependence of the resistivity p (111) in the range 10 - 300 K An activated character of conductivity was observed in all temperature range. The conductivity in the temperature range 200 - 300 K can be attributed to nearest neighbor hopping (NNH) type conductivity and/or to hole activation from defect acceptor level to the valence band mechanism. At the lower temperatures, 100 - 200 K, the Mott variable-range hopping (VRH) conductivity [2] was observed. Analysis of the Mott - VRH conductivity yields the value of the semi - width of the acceptor band, w~ 130 meV. From the rectangular shape approximation of the density of the states for an acceptor band, the values of the relative acceptor concentration NINc~ 0.2 and the localization radius a/ao ~ 1.2 can be obtained. The values yielded that the investigated samples of CZGS ai·e far from the metal - insulator transition. |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Hajdeu-Chicaros, E.F.</dc:creator> <dc:date>2014</dc:date> <dc:description xml:lang='en'><p>The Cu2ZnGeS4 (CZGS) quatemaiy compound is promising for photovoltaic application as an absorber layer of low-cost thin film solar cells. It has a p-type of electrical conductivity and a high abso1ption coefficient [ 1]. Single c1ystals of CZGS were grown by chemical vapor transpo1t using iodine as a transpo1t agent. The temperature dependence of the resistivity p (111) in the range 10 - 300 K An activated character of conductivity was observed in all temperature range. The conductivity in the temperature range 200 - 300 K can be attributed to nearest neighbor hopping (NNH) type conductivity and/or to hole activation from defect acceptor level to the valence band mechanism. At the lower temperatures, 100 - 200 K, the Mott variable-range hopping (VRH) conductivity [2] was observed. Analysis of the Mott - VRH conductivity yields the value of the semi - width of the acceptor band, w~ 130 meV. From the rectangular shape approximation of the density of the states for an acceptor band, the values of the relative acceptor concentration NINc~ 0.2 and the localization radius a/a<sub>o</sub> ~ 1.2 can be obtained. The values yielded that the investigated samples of CZGS ai·e far from the metal - insulator transition.</p></dc:description> <dc:source>Materials Science and Condensed Matter Physics (Editia 7) 107-107</dc:source> <dc:title>Electrical properties of Cu2ZnGeS4 single crystals</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>