Electrical properties of Cu2ZnGeS4 single crystals

Hajdeu-Chicaros Elena

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HAJDEU-CHICAROS, Elena. Electrical properties of Cu2ZnGeS4 single crystals. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 107.

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Materials Science and Condensed Matter Physics
Editia 7, 2014

Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

Electrical properties of Cu2ZnGeS4 single crystals

Pag. 107-107

Hajdeu-Chicaros Elena

Institute of Applied Physics, Academy of Sciences of Moldova

Proiecte:

Menționat în lucrare: 13.820.05.11/BF Creşterea cristalelor şi cercetarea proprietăţilor fi zico-chimice a compuşilor promiţători pentru folosire în fotovoltaică Сu2ZnSnS4, Cu2ZnSnSe4 şi soluţiilor solide Cu2ZnSnS4хSe4(1-х)

Menționat în lucrare: 14.819.02.17F Studiul proprietăților electrice și optice a compușilor Cu2ZnSi(Se,Te)4 pentru aplicații în producerea energiei din surse regenerabile.

Menționat în lucrare: 11.817.05.03A Materiale semiconductoare halcogenice, compuşi metaloorganici şi magneţi moleculari pentru medii de înregistrare, senzori, aplicaţii optoelectronice şi fotovoltaice

Disponibil în IBN: 27 februarie 2019

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The Cu2ZnGeS4 (CZGS) quatemaiy compound is promising for photovoltaic application as an absorber layer of low-cost thin film solar cells. It has a p-type of electrical conductivity and a high abso1ption coefficient [ 1]. Single c1ystals of CZGS were grown by chemical vapor transpo1t using iodine as a transpo1t agent. The temperature dependence of the resistivity p (111) in the range 10 - 300 K An activated character of conductivity was observed in all temperature range. The conductivity in the temperature range 200 - 300 K can be attributed to nearest neighbor hopping (NNH) type conductivity and/or to hole activation from defect acceptor level to the valence band mechanism. At the lower temperatures, 100 - 200 K, the Mott variable-range hopping (VRH) conductivity [2] was observed. Analysis of the Mott - VRH conductivity yields the value of the semi - width of the acceptor band, w~ 130 meV. From the rectangular shape approximation of the density of the states for an acceptor band, the values of the relative acceptor concentration NINc~ 0.2 and the localization radius a/a_o ~ 1.2 can be obtained. The values yielded that the investigated samples of CZGS ai·e far from the metal - insulator transition.

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