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| Fizica materiei condensate. Fizica solidului (349) |
 SM ISO690:2012LÄHDERANTA, Erkki, LISUNOV, Konstantin, SHAKHOV, Mikhail, GUK, Maxim, HAJDEU-CHICAROS, Elena, LEVCENKO, Sergiu, ZAKHARCHUK, Ivan A., ARUSHANOV, Ernest. High-field hopping magnetotransport in kesterites. In: Journal of Magnetism and Magnetic Materials, 2018, vol. 459, pp. 246-251. ISSN 0304-8853. DOI: https://doi.org/10.1016/j.jmmm.2017.10.094 |
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  Journal of Magnetism and Magnetic Materials |
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| Volumul 459 / 2018 / ISSN 0304-8853 | |
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| DOI:https://doi.org/10.1016/j.jmmm.2017.10.094 | |
| CZU: 538.9 | |
| Pag. 246-251 | |
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Transport properties of the kesterite-like single crystals of Cu2ZnSnS4, Cu2ZnSnxGe1−xSe4 and Cu2ZnGeS4 are investigated in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping (VRH) conduction is established by investigations of the resistivity, ρ (T), in all the materials mentioned above within broad temperature intervals of ΔTv4 ∼ 50–150 K, 50–250 K and 100–200 K, respectively. In addition, the Shklovskii-Efros VRH conductivity below Tv2 ∼ 3–4 K, the nearest-neighbour hopping (NNH) charge transfer between T ∼ 250–320 K and the conductivity by activation of holes on the mobility threshold at temperatures outside ΔTv4, respectively, are observed in these materials. In Cu2ZnSnS4, magnetoresistance (MR) contains only a positive contribution, connected mainly to a shrinkage of impurity wave functions by the magnetic field. At the same time, a negative contribution to MR, attributable to interference effects in VRH, is observed in Cu2ZnSnxGe1−xSe4 and, especially, in Cu2ZnGeS4. The joint analysis of the MR and ρ (T) data has yielded important electronic parameters of the materials. This includes widths of the acceptor band W and of the Coulomb gap Δ the NNH activation energy En, the localization radius a, the acceptor concentration NA and the density of the localized states at the Fermi level, g (μ). A dramatic increase of a in Cu2ZnSnS4 with decreasing T is observed, whereas in Cu2ZnSnxGe1−xSe4 all the parameter W, En, g (μ), a and NA are non-monotonic functions of x. Finally, in Cu2ZnGeS4 the Hall coefficient RH (T) is negative (despite of the p-type conduction), exhibiting the dependence close to that of ρ (T) in the Mott VRH interval. |
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| Cuvinte-cheie Hopping conduction, Kesterites, Magnetoresistance, single crystals |
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DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.1016/j.jmmm.2017.10.094</identifier> <creators> <creator> <creatorName>Lahderanta, E.M.</creatorName> <affiliation>Lappeenranta University of Technology, Finlanda</affiliation> </creator> <creator> <creatorName>Lisunov, C.G.</creatorName> <affiliation>Lappeenranta University of Technology, Finlanda</affiliation> </creator> <creator> <creatorName>Shakhov, M.A.</creatorName> <affiliation>Lappeenranta University of Technology, Finlanda</affiliation> </creator> <creator> <creatorName>Guc, M.S.</creatorName> <affiliation>Lappeenranta University of Technology, Finlanda</affiliation> </creator> <creator> <creatorName>Hajdeu-Chicaros, E.F.</creatorName> <affiliation>Lappeenranta University of Technology, Finlanda</affiliation> </creator> <creator> <creatorName>Levcenco, S.V.</creatorName> <affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Zakharchuk, I.</creatorName> <affiliation>Lappeenranta University of Technology, Finlanda</affiliation> </creator> <creator> <creatorName>Aruşanov, E.C.</creatorName> <affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>High-field hopping magnetotransport in kesterites</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2018</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0304-8853</relatedIdentifier> <subjects> <subject>Hopping conduction</subject> <subject>Kesterites</subject> <subject>Magnetoresistance</subject> <subject>single crystals</subject> <subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>538.9</subject> </subjects> <dates> <date dateType='Issued'>2018-08-01</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>Transport properties of the kesterite-like single crystals of Cu<sub>2</sub>ZnSnS<sub>4</sub>, Cu<sub>2</sub>ZnSn<sub>x</sub>Ge<sub>1−x</sub>Se<sub>4</sub> and Cu<sub>2</sub>ZnGeS<sub>4</sub> are investigated in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping (VRH) conduction is established by investigations of the resistivity, ρ (T), in all the materials mentioned above within broad temperature intervals of ΔT<sub>v4</sub> ∼ 50–150 K, 50–250 K and 100–200 K, respectively. In addition, the Shklovskii-Efros VRH conductivity below T<sub>v2</sub> ∼ 3–4 K, the nearest-neighbour hopping (NNH) charge transfer between T ∼ 250–320 K and the conductivity by activation of holes on the mobility threshold at temperatures outside ΔT<sub>v4</sub>, respectively, are observed in these materials. In Cu<sub>2</sub>ZnSnS<sub>4</sub>, magnetoresistance (MR) contains only a positive contribution, connected mainly to a shrinkage of impurity wave functions by the magnetic field. At the same time, a negative contribution to MR, attributable to interference effects in VRH, is observed in Cu<sub>2</sub>ZnSn<sub>x</sub>Ge<sub>1−x</sub>Se<sub>4</sub> and, especially, in Cu<sub>2</sub>ZnGeS<sub>4</sub>. The joint analysis of the MR and ρ (T) data has yielded important electronic parameters of the materials. This includes widths of the acceptor band W and of the Coulomb gap Δ the NNH activation energy E<sub>n</sub>, the localization radius a, the acceptor concentration N<sub>A</sub> and the density of the localized states at the Fermi level, g (μ). A dramatic increase of a in Cu<sub>2</sub>ZnSnS<sub>4</sub> with decreasing T is observed, whereas in Cu<sub>2</sub>ZnSn<sub>x</sub>Ge<sub>1−x</sub>Se<sub>4</sub> all the parameter W, E<sub>n</sub>, g (μ), a and N<sub>A</sub> are non-monotonic functions of x. Finally, in Cu<sub>2</sub>ZnGeS<sub>4</sub> the Hall coefficient R<sub>H</sub> (T) is negative (despite of the p-type conduction), exhibiting the dependence close to that of ρ (T) in the Mott VRH interval.</p></description> </descriptions> <formats> <format>uri</format> </formats> </resource>
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