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 749 0 |
| Căutarea după subiecte similare conform CZU |
| 538.9 (350) |
| Fizica materiei condensate. Fizica solidului (349) |
 SM ISO690:2012LÄHDERANTA, Erkki, LISUNOV, Konstantin, SHAKHOV, Mikhail, GUK, Maxim, HAJDEU-CHICAROS, Elena, LEVCENKO, Sergiu, ZAKHARCHUK, Ivan A., ARUSHANOV, Ernest. High-field hopping magnetotransport in kesterites. In: Journal of Magnetism and Magnetic Materials, 2018, vol. 459, pp. 246-251. ISSN 0304-8853. DOI: https://doi.org/10.1016/j.jmmm.2017.10.094 |
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  Journal of Magnetism and Magnetic Materials |
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| Volumul 459 / 2018 / ISSN 0304-8853 | |
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| DOI:https://doi.org/10.1016/j.jmmm.2017.10.094 | |
| CZU: 538.9 | |
| Pag. 246-251 | |
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| Rezumat | |
Transport properties of the kesterite-like single crystals of Cu2ZnSnS4, Cu2ZnSnxGe1−xSe4 and Cu2ZnGeS4 are investigated in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping (VRH) conduction is established by investigations of the resistivity, ρ (T), in all the materials mentioned above within broad temperature intervals of ΔTv4 ∼ 50–150 K, 50–250 K and 100–200 K, respectively. In addition, the Shklovskii-Efros VRH conductivity below Tv2 ∼ 3–4 K, the nearest-neighbour hopping (NNH) charge transfer between T ∼ 250–320 K and the conductivity by activation of holes on the mobility threshold at temperatures outside ΔTv4, respectively, are observed in these materials. In Cu2ZnSnS4, magnetoresistance (MR) contains only a positive contribution, connected mainly to a shrinkage of impurity wave functions by the magnetic field. At the same time, a negative contribution to MR, attributable to interference effects in VRH, is observed in Cu2ZnSnxGe1−xSe4 and, especially, in Cu2ZnGeS4. The joint analysis of the MR and ρ (T) data has yielded important electronic parameters of the materials. This includes widths of the acceptor band W and of the Coulomb gap Δ the NNH activation energy En, the localization radius a, the acceptor concentration NA and the density of the localized states at the Fermi level, g (μ). A dramatic increase of a in Cu2ZnSnS4 with decreasing T is observed, whereas in Cu2ZnSnxGe1−xSe4 all the parameter W, En, g (μ), a and NA are non-monotonic functions of x. Finally, in Cu2ZnGeS4 the Hall coefficient RH (T) is negative (despite of the p-type conduction), exhibiting the dependence close to that of ρ (T) in the Mott VRH interval. |
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| Cuvinte-cheie Hopping conduction, Kesterites, Magnetoresistance, single crystals |
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The Mott variable-range hopping (VRH) conduction is established by investigations of the resistivity, ρ (T), in all the materials mentioned above within broad temperature intervals of ΔT<sub>v4</sub> ∼ 50–150 K, 50–250 K and 100–200 K, respectively. In addition, the Shklovskii-Efros VRH conductivity below T<sub>v2</sub> ∼ 3–4 K, the nearest-neighbour hopping (NNH) charge transfer between T ∼ 250–320 K and the conductivity by activation of holes on the mobility threshold at temperatures outside ΔT<sub>v4</sub>, respectively, are observed in these materials. In Cu<sub>2</sub>ZnSnS<sub>4</sub>, magnetoresistance (MR) contains only a positive contribution, connected mainly to a shrinkage of impurity wave functions by the magnetic field. At the same time, a negative contribution to MR, attributable to interference effects in VRH, is observed in Cu<sub>2</sub>ZnSn<sub>x</sub>Ge<sub>1−x</sub>Se<sub>4</sub> and, especially, in Cu<sub>2</sub>ZnGeS<sub>4</sub>. 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