High-field hopping magnetotransport in kesterites

Lähderanta Erkki; Lisunov Konstantin; Shakhov Mikhail; Guk Maxim; Hajdeu-Chicaros Elena; Levcenko Sergiu; Zakharchuk Ivan A.; Arushanov Ernest

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755

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538.9 (350)

Fizica materiei condensate. Fizica solidului (349)

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LÄHDERANTA, Erkki, LISUNOV, Konstantin, SHAKHOV, Mikhail, GUK, Maxim, HAJDEU-CHICAROS, Elena, LEVCENKO, Sergiu, ZAKHARCHUK, Ivan A., ARUSHANOV, Ernest. High-field hopping magnetotransport in kesterites. In: Journal of Magnetism and Magnetic Materials, 2018, vol. 459, pp. 246-251. ISSN 0304-8853. DOI: https://doi.org/10.1016/j.jmmm.2017.10.094

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Journal of Magnetism and Magnetic Materials

Volumul 459 / 2018 / ISSN 0304-8853

High-field hopping magnetotransport in kesterites

DOI:https://doi.org/10.1016/j.jmmm.2017.10.094

CZU: 538.9

Pag. 246-251

Lähderanta Erkki¹, Lisunov Konstantin¹², Shakhov Mikhail¹³, Guk Maxim¹², Hajdeu-Chicaros Elena¹², Levcenko Sergiu²⁴, Zakharchuk Ivan A.¹, Arushanov Ernest²

¹ Lappeenranta University of Technology,
² Institute of Applied Physics, Academy of Sciences of Moldova,
³ Ioffe Physical-Technical Institute, RAS,
⁴ Helmholtz-Centre Berlin for Materials and Energy

Disponibil în IBN: 12 mai 2018

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Transport properties of the kesterite-like single crystals of Cu₂ZnSnS₄, Cu₂ZnSn_xGe_1−xSe₄ and Cu₂ZnGeS₄ are investigated in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping (VRH) conduction is established by investigations of the resistivity, ρ (T), in all the materials mentioned above within broad temperature intervals of ΔT_v4 ∼ 50–150 K, 50–250 K and 100–200 K, respectively. In addition, the Shklovskii-Efros VRH conductivity below T_v2 ∼ 3–4 K, the nearest-neighbour hopping (NNH) charge transfer between T ∼ 250–320 K and the conductivity by activation of holes on the mobility threshold at temperatures outside ΔT_v4, respectively, are observed in these materials. In Cu₂ZnSnS₄, magnetoresistance (MR) contains only a positive contribution, connected mainly to a shrinkage of impurity wave functions by the magnetic field. At the same time, a negative contribution to MR, attributable to interference effects in VRH, is observed in Cu₂ZnSn_xGe_1−xSe₄ and, especially, in Cu₂ZnGeS₄. The joint analysis of the MR and ρ (T) data has yielded important electronic parameters of the materials. This includes widths of the acceptor band W and of the Coulomb gap Δ the NNH activation energy E_n, the localization radius a, the acceptor concentration N_A and the density of the localized states at the Fermi level, g (μ). A dramatic increase of a in Cu₂ZnSnS₄ with decreasing T is observed, whereas in Cu₂ZnSn_xGe_1−xSe₄ all the parameter W, E_n, g (μ), a and N_A are non-monotonic functions of x. Finally, in Cu₂ZnGeS₄ the Hall coefficient R_H (T) is negative (despite of the p-type conduction), exhibiting the dependence close to that of ρ (T) in the Mott VRH interval.

Cuvinte-cheie
Hopping conduction, Kesterites, Magnetoresistance, single crystals

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