We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro- and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. The developed InAs nanostructures may also find applications in IR-sensitive displays, submicron sources of irradiation and devices with variable bands and barriers.