Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
![]() ![]() |
![]() LYTOVCHENKO, V., EVTUKH, A. A., SEMENENKO, Mykola, GRYGORIEV, Anton, YILMAZOGLU, Oktay, HARTNAGEL, Hans Ludwig, SIRBU, Lilian, TIGINYANU, Ion, URSAKI, Veaceslav. Electron field emission from narrow band gap semiconductors (InAs). In: Semiconductor Science and Technology, 2007, vol. 22, pp. 1092-1096. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/22/10/003 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Semiconductor Science and Technology | |
Volumul 22 / 2007 / ISSN 0268-1242 | |
|
|
DOI:https://doi.org/10.1088/0268-1242/22/10/003 | |
Pag. 1092-1096 | |
Rezumat | |
We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro- and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. The developed InAs nanostructures may also find applications in IR-sensitive displays, submicron sources of irradiation and devices with variable bands and barriers. |
|
Cuvinte-cheie Cathodes, Electrons, Energy gap, Field emission, Hot carriers, Voltage control |
|
|
Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Litovcenko, V.G.</dc:creator> <dc:creator>Evtukh, A.</dc:creator> <dc:creator>Semenenko, M.O.</dc:creator> <dc:creator>Grygoriev, A.</dc:creator> <dc:creator>Yilmazoglu, O.</dc:creator> <dc:creator>Hartnagel, H.</dc:creator> <dc:creator>Sîrbu, L.</dc:creator> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:creator>Ursachi, V.V.</dc:creator> <dc:date>2007-10-01</dc:date> <dc:description xml:lang='en'><p>We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro- and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. The developed InAs nanostructures may also find applications in IR-sensitive displays, submicron sources of irradiation and devices with variable bands and barriers.</p></dc:description> <dc:identifier>10.1088/0268-1242/22/10/003</dc:identifier> <dc:source>Semiconductor Science and Technology () 1092-1096</dc:source> <dc:subject>Cathodes</dc:subject> <dc:subject>Electrons</dc:subject> <dc:subject>Energy gap</dc:subject> <dc:subject>Field emission</dc:subject> <dc:subject>Hot carriers</dc:subject> <dc:subject>Voltage control</dc:subject> <dc:title>Electron field emission from narrow band gap semiconductors (InAs)</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>