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![]() LYTOVCHENKO, V., EVTUKH, A. A., SEMENENKO, Mykola, GRYGORIEV, Anton, YILMAZOGLU, Oktay, HARTNAGEL, Hans Ludwig, SIRBU, Lilian, TIGINYANU, Ion, URSAKI, Veaceslav. Electron field emission from narrow band gap semiconductors (InAs). In: Semiconductor Science and Technology, 2007, vol. 22, pp. 1092-1096. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/22/10/003 |
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Semiconductor Science and Technology | |
Volumul 22 / 2007 / ISSN 0268-1242 | |
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DOI:https://doi.org/10.1088/0268-1242/22/10/003 | |
Pag. 1092-1096 | |
Rezumat | |
We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro- and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. The developed InAs nanostructures may also find applications in IR-sensitive displays, submicron sources of irradiation and devices with variable bands and barriers. |
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Cuvinte-cheie Cathodes, Electrons, Energy gap, Field emission, Hot carriers, Voltage control |
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