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SM ISO690:2012 ARSENTYEV, Ivan, BELYAEV, Alexander, BOBYL, A., BOLTOVETS, N., IVANOV, V., KOVTONYUK, V., KONAKOVA, Raisa, KUDRYK, Ya., MILENIN, Viktor, TARASOV, Ilya, MARKOVSKII, Ye., REDKO, Roman, RUSSU, Emil. Physics-technological fabrication features and parameters of InP MM-wave Gunn diodes. In: International Crimean Conference "Microwave and Telecommunication Technology", Ed. 16, 11-15 septembrie 2006, Sevastopol. Sevastopol: Weber Publishing Co., 2006, Ediția 16, Vol.2, pp. 642-643. ISBN 978-966322006-2. DOI: https://doi.org/10.1109/CRMICO.2006.256140 |
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International Crimean Conference "Microwave and Telecommunication Technology" Ediția 16, Vol.2, 2006 |
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Conferința "International Crimean Conference ”Microwave and Telecommunication Technology”" 16, Sevastopol, Ucraina, 11-15 septembrie 2006 | ||
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DOI:https://doi.org/10.1109/CRMICO.2006.256140 | ||
Pag. 642-643 | ||
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We developed (i) a technology to form Au-Ge-TiBx-Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n+-n ++ epitaxial structures made on the standard and porous n ++-InP substrates, (N) batch-fabrication technique for mesas with gold heat sink, and (iii) technique for diode chip packaging in a metal-quartz package. It is shown that the Gunn diodes of both types (on the standard and porous substrates) ensure generation of microwave power in the 88-98 GHz frequency range. When operating under normal climatic conditions and at a temperature no less than -40 °C, the power output Pout of the Gunn diodes made on the porous substrates is over that of the ones made on the standard substrates. At package temperature of +75 °C, the power output of the Gunn diodes of both types decreases, with Pout value of the diodes made on the porous substrate becoming somewhat below that of the ones made on the standard substrate. We suppose that the reason for Pout decrease is the temperature dependence of thermal conductivity which is different in the standard and porous InP. |
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Cuvinte-cheie Engineering controlled terms Computer networks, Germanium, Gunn diodes, Gunn effect, Microwaves Engineering uncontrolled terms (OTDR) technology, Fabrication features, International (CO), Mm waves, Telecommunication technologies Engineering main heading Technology |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Arsentiev, I.N.</dc:creator> <dc:creator>Beleaev, A.E.</dc:creator> <dc:creator>Bobyl, A.V.</dc:creator> <dc:creator>Boltovets, N.S.</dc:creator> <dc:creator>Ivanov, V.N.</dc:creator> <dc:creator>Kovtonyuk, V.M.</dc:creator> <dc:creator>Konakova, R.V.</dc:creator> <dc:creator>Kudryk, Y.Y.</dc:creator> <dc:creator>Milenin, V.V.</dc:creator> <dc:creator>Tarasov, I.S.</dc:creator> <dc:creator>Markovsky, E.P.</dc:creator> <dc:creator>Redko, R.A.</dc:creator> <dc:creator>Russu, E.V.</dc:creator> <dc:date>2006</dc:date> <dc:description xml:lang='en'><p>We developed (i) a technology to form Au-Ge-TiB<sub>x</sub>-Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n<sup>+</sup>-n <sup>++</sup> epitaxial structures made on the standard and porous n <sup>++</sup>-InP substrates, (N) batch-fabrication technique for mesas with gold heat sink, and (iii) technique for diode chip packaging in a metal-quartz package. It is shown that the Gunn diodes of both types (on the standard and porous substrates) ensure generation of microwave power in the 88-98 GHz frequency range. When operating under normal climatic conditions and at a temperature no less than -40 °C, the power output P<sub>out</sub> of the Gunn diodes made on the porous substrates is over that of the ones made on the standard substrates. At package temperature of +75 °C, the power output of the Gunn diodes of both types decreases, with P<sub>out</sub> value of the diodes made on the porous substrate becoming somewhat below that of the ones made on the standard substrate. We suppose that the reason for P<sub>out</sub> decrease is the temperature dependence of thermal conductivity which is different in the standard and porous InP.</p></dc:description> <dc:description xml:lang='ru'><p>Разработаны технология формирования омических контактов Au–Ge–TiBx–Au к фосфидиндиевым диодам Ганна на основе n-n+ -n++ эпитаксиальных структур, изготовленных на стандартных и пористых подложках n++- InP, групповая технология изготовления мезаструктур с золотым теплоотводом и технология корпусирования диодных чипов в металлокварцевый корпус. Показано, что диоды Ганна обоих типов (на стандартных и пористых подложках) генерируют СВЧ мощность в диапазоне частот 88- 98 ГГц. При работе в нормальных климатических условиях и при температуре не ниже –40 °С выходная мощность Рвых диодов Ганна, изготовленных на пористых подложках, выше, чем у диодов Ганна на стандартных подложках. При температуре корпуса +75 °С выходная мощность диодов Ганна обоих типов уменьшается, но в диодах на пористой подложке Рвых становится несколько меньше по сравнению с диодами Ганна на стандартной подложке. Предполагаемая причина уменьшения Рвых обусловлена температурной зависимостью теплопроводности, различной в пористом материале и в стандартном InP</p></dc:description> <dc:identifier>10.1109/CriMiCo11618.2006</dc:identifier> <dc:source>International Crimean Conference "Microwave and Telecommunication Technology" (Ediția 16, Vol.2) 642-643</dc:source> <dc:subject>Engineering controlled terms Computer networks</dc:subject> <dc:subject>Germanium</dc:subject> <dc:subject>Gunn diodes</dc:subject> <dc:subject>Gunn effect</dc:subject> <dc:subject>Microwaves Engineering uncontrolled terms (OTDR) technology</dc:subject> <dc:subject>Fabrication features</dc:subject> <dc:subject>International (CO)</dc:subject> <dc:subject>Mm waves</dc:subject> <dc:subject>Telecommunication technologies Engineering main heading Technology</dc:subject> <dc:title>Physics-technological fabrication features and parameters of InP MM-wave Gunn diodes</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>