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SM ISO690:2012

Recent progress in GaN-based devices for terahertz technology

Sirkeli Vadim12, Tighineanu Ion3, Hartnagel Hans Ludwig1

1 Technical University Darmstadt, 2 Moldova State University, 3 Technical University of Moldova

IFMBE Proceedings

Ediția 4, Vol.77. 2020. Switzerland. ISBN 978-303031865-9.

Disponibil online 31 October, 2020. Descarcări-6. Vizualizări-559

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Physics-technological fabrication features and parameters of InP MM-wave Gunn diodes

Arsentiev Ivan1, Beleaev Alexander2, Bobyl A.1, Boltovets N.3, Ivanov V.3, Kovtonyuk V.3, Konakova Raisa2, Kudryk Ya.2, Milenin Viktor2, Tarasov Ilya1, Markovsky E.2, Redko Roman2, Russu Emil4

1 Ioffe Physical-Technical Institute, RAS, 4 Institute of Applied Physics, Academy of Sciences of Moldova

International Crimean Conference "Microwave and Telecommunication Technology"

Ediția 16, Vol.2. 2006. Sevastopol. ISBN 9663220066.

Disponibil online 17 June, 2024. Descarcări-0. Vizualizări-12

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New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes

Arsentiev Ivan1, Beleaev Alexander2, Bobyl A.1, Boltovets N.3, Ivanov V.3, Konakova Raisa2, Konnikov Samuil1, Kudryk Ya.2, Milenin Viktor2, Tarasov Ilya1, Markovsky E.2, Rusu Emil4

1 Ioffe Physical-Technical Institute of the Russian Academy of Sciences i, 4 Institute of Applied Physics, Academy of Sciences of Moldova

International Crimean Conference "Microwave and Telecommunication Technology"

Ediția 15, Vol.2. 2005. Sevastopol. ISBN 9667968790.

Disponibil online 17 June, 2024. Descarcări-0. Vizualizări-15

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