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 SM ISO690:2012ANDRIESH, Andrei, VERLAN, Victor. Donor- and acceptor-like center revealing by photoconductivity of amorphous thin As2Se3 films. In: Journal of Optoelectronics and Advanced Materials, 2001, vol. 3, pp. 455-458. ISSN 1454-4164. |
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  Journal of Optoelectronics and Advanced Materials |
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| Volumul 3 / 2001 / ISSN 1454-4164 | ||||||
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| Pag. 455-458 | ||||||
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Measurements of photoconductivity and relaxation of positive and negative charge in amorphous thin As2Se3 layers are discussed. Photosensitive donor- and acceptor-like centers of 1.05 eV and 0.76 eV energies from valence band were revealed. These energies are constant and independent of light intensity in the range 1.5×1015 - 1.5×1015 quanta/(cm2s) and of energy of quanta. Wide quasicontinuously distribution trap centers with maximums at 0.62, 0.87 and 1.05 eV were found by relaxation measurements of positive and negative charge. |
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| Cuvinte-cheie As2Se3 films, Donor and acceptor-like centers, photoconductivity |
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