Steady-state and transient photoconductivity characteristics of thermally and laser-beam deposited chalcogenide amorphous films As₄₀Se₆₀ and As₅₀Se₅₀ are studied at varied light intensity and temperature. The lux-ampere characteristics are shown to change the power exponent from a value greater than 0.5 at low intensities to the value less than 0.5 at high intensities, indicating the change in recombination reaction. The transient photocurrents in step-function mode of excitation were found to be consistent with the model of trap-controlled non-stationary capture and recombination in exponentially distributed in energy hole traps. Evaluating of the trap energy distribution parameter independently from the photocurrent transients as well as from the dependence of steady-state photoconductivity measurements yields consistent results.