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 SM ISO690:2012CHERNIKOV, A., NOLLE, Edouard, PROKHOROV, Alexander M., RUSSU, Emil, SCHELEV, Mikhail, SOKOL, E.. IR photocathodes for streak image tubes based on semiconductor heterostructures and superlattices. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 20, 21-25 septembrie 1992, Victoria, British Columbia. Bellingham, Washington: SPIE, 1993, Ediția 20, Vol.1801, pp. 238-245. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.145772 |
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 Proceedings of SPIE - The International Society for Optical Engineering Ediția 20, Vol.1801, 1993 |
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Congresul "High-Speed Photography and Photonics" 20, Victoria, British Columbia, Canada, 21-25 septembrie 1992 | ||||||
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| DOI:https://doi.org/10.1117/12.145772 | ||||||
| Pag. 238-245 | ||||||
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Photocathodes based on In0.53Ga0.47As/InP heterostructures (HS-photocathodes) with Schottky barriers for spectral range of 0.9-1.6 μm were investigated. The maximum external quantum yield was 0.5% at Λ= 1.5μm and dark current was Ied=3∗10-8 A/cm2. It has been shown that in such photoemitters under reverse bias of about U=30 V, the electric field completely penetrates into the working layer of the photocathode. Since the dark current does not depend on the value of the reverse bias, HS-photocathodes may be used for time analyzing tubes to record picosecond pulses with milliwatt peak intensity. To increase the signal/noise ratio we suggest to use InP/In0.53Ga0.47As superlattice (SL) for designing SL-photocathode with internal amplification. |
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| Cuvinte-cheie Engineering controlled terms Electric fields, Field emission cathodes, Heterojunctions, III-V semiconductors, indium phosphide, Photocathodes, Schottky barrier diodes, Semiconducting indium phosphide, Semiconductor superlattices Engineering uncontrolled terms In0.53Ga0.47As, Internal amplification, Pico-second pulse, Schottky barriers, Semiconductor heterostructures, Signal/noise ratio, Spectral range, Streak image tube Engineering main heading High speed photography |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Chernikov, A.S.</dc:creator> <dc:creator>Nolle, E.L.</dc:creator> <dc:creator>Prokhorov, A.</dc:creator> <dc:creator>Russu, E.V.</dc:creator> <dc:creator>Schelev, M.Y.</dc:creator> <dc:creator>Sokol, E.G.</dc:creator> <dc:date>1993</dc:date> <dc:description xml:lang='en'><p>Photocathodes based on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP heterostructures (HS-photocathodes) with Schottky barriers for spectral range of 0.9-1.6 μm were investigated. The maximum external quantum yield was 0.5% at Λ= 1.5μm and dark current was I<sub>ed</sub>=3∗10<sup>-8</sup> A/cm<sup>2</sup>. It has been shown that in such photoemitters under reverse bias of about U=30 V, the electric field completely penetrates into the working layer of the photocathode. Since the dark current does not depend on the value of the reverse bias, HS-photocathodes may be used for time analyzing tubes to record picosecond pulses with milliwatt peak intensity. To increase the signal/noise ratio we suggest to use InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As superlattice (SL) for designing SL-photocathode with internal amplification.</p></dc:description> <dc:source>Proceedings of SPIE - The International Society for Optical Engineering (Ediția 20, Vol.1801) 238-245</dc:source> <dc:subject>Engineering controlled terms Electric fields</dc:subject> <dc:subject>Field emission cathodes</dc:subject> <dc:subject>Heterojunctions</dc:subject> <dc:subject>III-V semiconductors</dc:subject> <dc:subject>indium phosphide</dc:subject> <dc:subject>Photocathodes</dc:subject> <dc:subject>Schottky barrier diodes</dc:subject> <dc:subject>Semiconducting indium phosphide</dc:subject> <dc:subject>Semiconductor superlattices Engineering uncontrolled terms In0.53Ga0.47As</dc:subject> <dc:subject>Internal amplification</dc:subject> <dc:subject>Pico-second pulse</dc:subject> <dc:subject>Schottky barriers</dc:subject> <dc:subject>Semiconductor heterostructures</dc:subject> <dc:subject>Signal/noise ratio</dc:subject> <dc:subject>Spectral range</dc:subject> <dc:subject>Streak image tube Engineering main heading High speed photography</dc:subject> <dc:title>IR photocathodes for streak image tubes based on semiconductor heterostructures and superlattices</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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