Afișare rezultate

SM ISO690:2012

Deep level transient spectroscopy characterization of porous GaP layers

Călin Mircea

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 2000. New Jersey. DOI 10.1109/SMICND.2000.

Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-92

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Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs

Bejenari Igor12, Schroter Michael13, Claus Martin1

2 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,

European Solid-State Device Research Conference

Ediția a 47-a. 2017. Court Saint Etienne, Belgia. ISSN 19308876.

Disponibil online 21 February, 2022. Descarcări-0. Vizualizări-311

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Heterostructures on InP substrate for high-speed detection devices over a large spectral range (0.8-1.6 μm)

Budianu Elena1, Purica Munizer1, Rusu Emil2

1 National Institute for Research and Development in Microtechnologies , 2 Institute of Applied Physics, Academy of Sciences of Moldova

Microelectronic Engineering

Nr. / 2000 / ISSN - /ISSNe 0167-9317

Disponibil online 30 June, 2023. Descarcări-0. Vizualizări-116

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IR photocathodes for streak image tubes based on semiconductor heterostructures and superlattices

Chernikov A.1, Nolle Edouard1, Prokhorov Alexander M.1, Russu Emil2, Schelev Mikhail1, Sokol E.1

1 Prokhorov General Physics Institute RAS, 2 Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of SPIE - The International Society for Optical Engineering

Ediția 20, Vol.1801. 1993. Bellingham, Washington. ISSN 0277-786X.

Disponibil online 12 February, 2024. Descarcări-0. Vizualizări-106

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