| Articolul precedent |
| Articolul urmator |
 |
 185 0 |
 SM ISO690:2012CHERNIKOV, A., NOLLE, Edouard, PROKHOROV, Alexander M., RUSSU, Emil, SCHELEV, Mikhail, SOKOL, E.. IR photocathodes for streak image tubes based on semiconductor heterostructures and superlattices. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 20, 21-25 septembrie 1992, Victoria, British Columbia. Bellingham, Washington: SPIE, 1993, Ediția 20, Vol.1801, pp. 238-245. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.145772 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of SPIE - The International Society for Optical Engineering Ediția 20, Vol.1801, 1993 |
||||||
|
Congresul "High-Speed Photography and Photonics" 20, Victoria, British Columbia, Canada, 21-25 septembrie 1992 | ||||||
|
||||||
| DOI:https://doi.org/10.1117/12.145772 | ||||||
| Pag. 238-245 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
Photocathodes based on In0.53Ga0.47As/InP heterostructures (HS-photocathodes) with Schottky barriers for spectral range of 0.9-1.6 μm were investigated. The maximum external quantum yield was 0.5% at Λ= 1.5μm and dark current was Ied=3∗10-8 A/cm2. It has been shown that in such photoemitters under reverse bias of about U=30 V, the electric field completely penetrates into the working layer of the photocathode. Since the dark current does not depend on the value of the reverse bias, HS-photocathodes may be used for time analyzing tubes to record picosecond pulses with milliwatt peak intensity. To increase the signal/noise ratio we suggest to use InP/In0.53Ga0.47As superlattice (SL) for designing SL-photocathode with internal amplification. |
||||||
| Cuvinte-cheie Engineering controlled terms Electric fields, Field emission cathodes, Heterojunctions, III-V semiconductors, indium phosphide, Photocathodes, Schottky barrier diodes, Semiconducting indium phosphide, Semiconductor superlattices Engineering uncontrolled terms In0.53Ga0.47As, Internal amplification, Pico-second pulse, Schottky barriers, Semiconductor heterostructures, Signal/noise ratio, Spectral range, Streak image tube Engineering main heading High speed photography |
||||||
|
DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Chernikov, A.S.</creatorName> <affiliation>Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia</affiliation> </creator> <creator> <creatorName>Nolle, E.L.</creatorName> <affiliation>Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia</affiliation> </creator> <creator> <creatorName>Prokhorov, A.</creatorName> <affiliation>Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia</affiliation> </creator> <creator> <creatorName>Russu, E.V.</creatorName> <affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Schelev, M.Y.</creatorName> <affiliation>Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia</affiliation> </creator> <creator> <creatorName>Sokol, E.G.</creatorName> <affiliation>Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia</affiliation> </creator> </creators> <titles> <title xml:lang='en'>IR photocathodes for streak image tubes based on semiconductor heterostructures and superlattices</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>1993</publicationYear> <relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'></relatedIdentifier> <subjects> <subject>Engineering controlled terms Electric fields</subject> <subject>Field emission cathodes</subject> <subject>Heterojunctions</subject> <subject>III-V semiconductors</subject> <subject>indium phosphide</subject> <subject>Photocathodes</subject> <subject>Schottky barrier diodes</subject> <subject>Semiconducting indium phosphide</subject> <subject>Semiconductor superlattices Engineering uncontrolled terms In0.53Ga0.47As</subject> <subject>Internal amplification</subject> <subject>Pico-second pulse</subject> <subject>Schottky barriers</subject> <subject>Semiconductor heterostructures</subject> <subject>Signal/noise ratio</subject> <subject>Spectral range</subject> <subject>Streak image tube Engineering main heading High speed photography</subject> </subjects> <dates> <date dateType='Issued'>1993</date> </dates> <resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>Photocathodes based on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP heterostructures (HS-photocathodes) with Schottky barriers for spectral range of 0.9-1.6 μm were investigated. The maximum external quantum yield was 0.5% at Λ= 1.5μm and dark current was I<sub>ed</sub>=3∗10<sup>-8</sup> A/cm<sup>2</sup>. It has been shown that in such photoemitters under reverse bias of about U=30 V, the electric field completely penetrates into the working layer of the photocathode. Since the dark current does not depend on the value of the reverse bias, HS-photocathodes may be used for time analyzing tubes to record picosecond pulses with milliwatt peak intensity. To increase the signal/noise ratio we suggest to use InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As superlattice (SL) for designing SL-photocathode with internal amplification.</p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>
|
|
|
