Photo-thermo-plastic films (PTPF) with high-density recording (up to 1000 lines/mm) can be used repeatedly for structure zoned shooting. However, more work is underway to increase their light sensitivity and make it resistant to action of radioactive and powerful electromagnetic radiation. It was found that chalcogenide glass semiconductors (CGS) combine properties of both glasses and semiconductors that determine possibility of its using in different systems of optical data recording. Most bright representatives of glass semiconductors are being sulfide and selenide of arsenic. Results of complex investigations on photoelectric properties of their thin layers are presented. The paper presents results of technological changing of the field of maximal photosensitivity of CGS layers in the range of optical spectral range from 400 to 800 nm, which satisfies requirements of optical data recording systems for spectrum-zoned-shooting. For increasing of CGS thin layers' photosensitivity the initial materials were doped by tin. Experiments have shown that doping by Sn on the level 1.2-1.4 at.% increases photosensitivity of layer by more than one order of magnitude. High photosensitivity of obtained PTPF determines possibility of their wide application in different optical image registration systems, which can be used as board memory devices.