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 SM ISO690:2012MATICIUC, Natalia, SPALATU, Nicolae, POTLOG, Tamara. Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 31, 13-15 octombrie 2008, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2008, Vol. 2, pp. 317-320. ISBN 978-142442004-9. DOI: https://doi.org/10.1109/SMICND.2008.4703413 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 2008 |
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Conferința "International Semiconductor Conference" 31, Sinaia, Romania, 13-15 octombrie 2008 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2008.4703413 | ||||||
| Pag. 317-320 | ||||||
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CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 = f(U) for low and high voltage ranges, respectively are (1-3)·1014 cm-3 and it is associated with the volume concentration of CdTe and (2-5) 1013 cm-3 which corresponds to the region of interface of the CdS/CdTe/. |
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| Cuvinte-cheie Capacitance voltage characteristic, Capacitance voltage measurements, CdTe, Charge concentration, high voltage, Space charge regions, Temperature range, Volume concentration |
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