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 SM ISO690:2012MATICIUC, Natalia, SPALATU, Nicolae, POTLOG, Tamara. Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 31, 13-15 octombrie 2008, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2008, Vol. 2, pp. 317-320. ISBN 978-142442004-9. DOI: https://doi.org/10.1109/SMICND.2008.4703413 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 2008 |
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Conferința "International Semiconductor Conference" 31, Sinaia, Romania, 13-15 octombrie 2008 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2008.4703413 | ||||||
| Pag. 317-320 | ||||||
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CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 = f(U) for low and high voltage ranges, respectively are (1-3)·1014 cm-3 and it is associated with the volume concentration of CdTe and (2-5) 1013 cm-3 which corresponds to the region of interface of the CdS/CdTe/. |
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| Cuvinte-cheie Capacitance voltage characteristic, Capacitance voltage measurements, CdTe, Charge concentration, high voltage, Space charge regions, Temperature range, Volume concentration |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Maticiuc, N.</dc:creator> <dc:creator>Spalatu, N.N.</dc:creator> <dc:creator>Potlog, T.P.</dc:creator> <dc:date>2008</dc:date> <dc:description xml:lang='en'><p>CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)<sup>2</sup> = f(U) for low and high voltage ranges, respectively are (1-3)·10<sup>14</sup> cm<sup>-3</sup> and it is associated with the volume concentration of CdTe and (2-5) 10<sup>13</sup> cm<sup>-3</sup> which corresponds to the region of interface of the CdS/CdTe/. </p></dc:description> <dc:source>Proceedings of the International Semiconductor Conference (Vol. 2) 317-320</dc:source> <dc:subject>Capacitance voltage characteristic</dc:subject> <dc:subject>Capacitance voltage measurements</dc:subject> <dc:subject>CdTe</dc:subject> <dc:subject>Charge concentration</dc:subject> <dc:subject>high voltage</dc:subject> <dc:subject>Space charge regions</dc:subject> <dc:subject>Temperature range</dc:subject> <dc:subject>Volume concentration</dc:subject> <dc:title>Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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