Articolul precedent |
Articolul urmator |
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SM ISO690:2012 LUPAN, Oleg, CHOW, Lee, URSACHI, Veaceslav, MONAICO, Eduard, TIGINYANU, Ion, SHISHIYANU, Sergiu, SHISHIYANU, Teodor, PARK, Sang Hoon, SCHULTE, Alfons. Effect of Sn dopant on the properties of ZnO nanorod arrays. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 30, 15-17 octombrie 2007, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2007, Vol. 2, Ediția 30, pp. 349-352. ISBN 1424408474, 978-142440847-4. DOI: https://doi.org/10.1109/SMICND.2007.4519732 |
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Proceedings of the International Semiconductor Conference Vol. 2, Ediția 30, 2007 |
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Conferința "30th International Semiconductor Conference" 30, Sinaia, Romania, 15-17 octombrie 2007 | ||||||
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DOI:https://doi.org/10.1109/SMICND.2007.4519732 | ||||||
Pag. 349-352 | ||||||
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Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photo thermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostructures at 700°C in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and Al doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed. |
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Cuvinte-cheie Electric conductivity, Energy gap, Light emission, Luminescence, Nanorods, nanostructures, photoluminescence, Semiconducting zinc compounds, Semiconductor growth, Semiconductor materials, Solutions, Tin alloys, Zinc alloys, zinc oxide |
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