| Articolul precedent |
| Articolul urmator |
 |
 131 0 |
 SM ISO690:2012MACHUGA, Anatol, RADU, Rodion, PÎNTEA, Valentina, ARAMĂ, Efim, ZHITAR, V., SHEMYAKOVA, Tatiana. X-ray luminescence in ZnIn2S4, CdGa2S 4 and Zn3in2S6. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 30, 15-17 octombrie 2007, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2007, Vol. 2, Ediția 30, pp. 377-380. ISBN 1424408474, 978-142440847-4. DOI: https://doi.org/10.1109/SMICND.2007.4519739 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of the International Semiconductor Conference Vol. 2, Ediția 30, 2007 |
||||||
|
Conferința "30th International Semiconductor Conference" 30, Sinaia, Romania, 15-17 octombrie 2007 | ||||||
|
||||||
| DOI:https://doi.org/10.1109/SMICND.2007.4519739 | ||||||
| Pag. 377-380 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
Results related to investigation of X-ray induced luminescence spectra in ZnIn2S4, CdGa2S4 and Zn 3In2S6 single crystals measured at 300 and 80 K are presented. The spectra mainly consist of one band with maximum at 1.67 and 1.97 eV (80 K), respectively, generated due to donor-acceptor recombination. |
||||||
| Cuvinte-cheie Electric conductivity, Light emission, Light sources, Semiconductor materials |
||||||
|
|
|
|
