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 SM ISO690:2012LUPAN, Oleg, CHOW, Lee, URSACHI, Veaceslav, MONAICO, Eduard, TIGINYANU, Ion, SHISHIYANU, Sergiu, SHISHIYANU, Teodor, PARK, Sang Hoon, SCHULTE, Alfons. Effect of Sn dopant on the properties of ZnO nanorod arrays. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 30, 15-17 octombrie 2007, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2007, Vol. 2, Ediția 30, pp. 349-352. ISBN 1424408474, 978-142440847-4. DOI: https://doi.org/10.1109/SMICND.2007.4519732 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of the International Semiconductor Conference Vol. 2, Ediția 30, 2007 |
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Conferința "30th International Semiconductor Conference" 30, Sinaia, Romania, 15-17 octombrie 2007 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2007.4519732 | ||||||
| Pag. 349-352 | ||||||
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Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photo thermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostructures at 700°C in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and Al doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed. |
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| Cuvinte-cheie Electric conductivity, Energy gap, Light emission, Luminescence, Nanorods, nanostructures, photoluminescence, Semiconducting zinc compounds, Semiconductor growth, Semiconductor materials, Solutions, Tin alloys, Zinc alloys, zinc oxide |
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