Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi 1 - X Sb x (0.06 ≤ x ≤ 0.20)
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GEORGITSE, A., IVANOV-OMSKII, Vladimir, MUNTYANU, Fiodor M., KARAMAN, Maria, POSTOLACHI, Igor. Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi 1 - X Sb x (0.06 ≤ x ≤ 0.20). In: Semiconductors, 2007, vol. 41, pp. 1178-1180. ISSN 1063-7826. DOI: https://doi.org/10.1134/S1063782607100090
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Semiconductors
Volumul 41 / 2007 / ISSN 1063-7826

Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi 1 - X Sb x (0.06 ≤ x ≤ 0.20)

DOI:https://doi.org/10.1134/S1063782607100090

Pag. 1178-1180

Georgitse A.1, Ivanov-Omskii Vladimir2, Muntyanu Fiodor M.1, Karaman Maria1, Postolachi Igor1
 
1 Tiraspol State University,
2 Ioffe Physical-Technical Institute, RAS
 
 
Disponibil în IBN: 17 octombrie 2023


Rezumat

The results of studying the effect of an interface of crystallites on the energy spectrum of electrons in narrow-gap Bi 1 - x Sb x semiconductor bicrystals are reported (0.06 ≤ x ≤ 0.20). The structure of the reflection spectra for bicrystals with the inclined crystallite boundary and corresponding single crystals is analyzed. A number of features are revealed from comparison of the optical spectra of single crystals and bicrystals with the same parameters in wavelength ranges as high as 6 eV; these features are caused by the effect of the crystallites' interface on the energy spectrum of charge carriers. 

Cuvinte-cheie
Bismuth, thermoelectric, thin films

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