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 SM ISO690:2012BOTNARYUK, V., GORCEAC, Leonid, DIACONU, I., RUD, V., RUD, Yu.. Photoelectric properties of n-CdS/p-InP heterojunctions. In: Semiconductors, 1998, vol. 32, pp. 61-66. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187360 |
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  Semiconductors |
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| Volumul 32 / 1998 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/1.1187360 | ||||||
| Pag. 61-66 | ||||||
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The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions as a function of the orientation of the indium phosphide substrate. The results of these investigations demonstrate the sensitivity of the photoelectric processes to several factors, including the crystallographic orientation of the p-type InP substrate and the optical quality of the CdS layer. The induced photopleochroism coefficient of these heterojunctions increases proportionally to the square of the angle of incidence (P1∼Θ2). Such CdS/InP heterojunctions can be employed as polarization-photosensitive devices. |
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| Cuvinte-cheie photosensitivity, Polarized Radiation, photodetectors |
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