Photoelectric properties of n-CdS/p-InP heterojunctions
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BOTNARYUK, V., GORCEAC, Leonid, DIACONU, I., RUD, V., RUD, Yu.. Photoelectric properties of n-CdS/p-InP heterojunctions. In: Semiconductors, 1998, vol. 32, pp. 61-66. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187360
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Semiconductors
Volumul 32 / 1998 / ISSN 1063-7826

Photoelectric properties of n-CdS/p-InP heterojunctions

DOI:https://doi.org/10.1134/1.1187360

Pag. 61-66

Botnaryuk V.1, Gorceac Leonid, Diaconu I.1, Rud V.2, Rud Yu.3
 
1 Moldova State University,
2 State Educational Institution St. Petersburg State Polytechnical University,
3 Ioffe Physical-Technical Institute, RAS
 
 
Disponibil în IBN: 15 octombrie 2023


Rezumat

The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions as a function of the orientation of the indium phosphide substrate. The results of these investigations demonstrate the sensitivity of the photoelectric processes to several factors, including the crystallographic orientation of the p-type InP substrate and the optical quality of the CdS layer. The induced photopleochroism coefficient of these heterojunctions increases proportionally to the square of the angle of incidence (P1∼Θ2). Such CdS/InP heterojunctions can be employed as polarization-photosensitive devices.

Cuvinte-cheie
photosensitivity, Polarized Radiation, photodetectors

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