Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
127 0 |
SM ISO690:2012 GEORGITSE, E., POSTOLACHI, Igor, PARANCHICH, Stepan, PARANCHICH, Lidiya, SMIRNOV, Vitaly. Radiative recombination in the narrow band gap solid solutions n-Hg1-xCdxSe. In: Semiconductors, 1996, vol. 30, pp. 99-101. ISSN 1063-7826. |
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Semiconductors | ||||||
Volumul 30 / 1996 / ISSN 1063-7826 | ||||||
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Pag. 99-101 | ||||||
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Radiative recombination in n-Hg1-xCdxSe (0.2≤x≤0.32) in the temperature range 4.2-17 K and in magnetic fields up to 8 T was investigated. The concentration Nd-NA of uncontrollable impurities was equal to (2-6) × 1016 cm-3. The photoluminescence spectra of n-Hg1-xCdxSe at 4.2 K in the absence of a magnetic field have a three-band structure. The observed emission bands were identified on the basis of integrated photoluminescence and photoelectric investigations and the effects of the temperature and a magnetic field: The short-wavelength A band is due to excitons bound on donor impurities, the B band is due to an exciton bound on composition fluctuations, and the long-wavelength C band is due to donor-acceptor recombination. The energy position of the donor was at 1.9 meV and the acceptor states were at 90 and 8 me V. |
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Cuvinte-cheie Selenides, Spin polarization, electron |
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