Aharonov-Bohm oscillations in single crystal Bi nanowires
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GITSU, Dumitru, HUBER, Tito, KONOPKO, Leonid, NIKOLAEVA, Albina. Aharonov-Bohm oscillations in single crystal Bi nanowires. In: Journal of Nanoelectronics and Optoelectronics, 2009, vol. 4, pp. 124-133. ISSN 1555-130X. DOI: https://doi.org/10.1166/jno.2009.1011
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Journal of Nanoelectronics and Optoelectronics
Volumul 4 / 2009 / ISSN 1555-130X

Aharonov-Bohm oscillations in single crystal Bi nanowires

DOI:https://doi.org/10.1166/jno.2009.1011
CZU: 621.382

Pag. 124-133

Gitsu Dumitru1, Huber Tito2, Konopko Leonid13, Nikolaeva Albina13
 
1 Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova,
2 Howard University,
3 International Laboratory of High Magnetic Fields and Low Temperatures
 
 
Disponibil în IBN: 24 august 2023


Rezumat

The Aharonov-Bohm effect (AB) exists in cylindrical wires as the magnetoresistance (MR) oscillations with a period ΔS that is proportional to Φ 0/S, where Φ 0 = h/e is the flux quantum and S is the wire cross section. The AB-type longitudinal MR oscillations "flux quantization" type with period ΔS = Φ 0/S caused by electrons undergoing continuous grazing incidence at the wire wall have been studied previously at 4.2 K in single bismuth nanowires with diameter 0.2 < d < 0.8 μm. Recently the new type of AB oscillations with period ΔB = h/e and ΔB = h/2e on single Bi nanowires with diameter d = 45-73 nm have been observed. The single nanowire samples were prepared by improved Ulitovsky technique and represented cylindrical single crystals with (1011) orientation along the wire axis. Here we present a review of experimental investigations of size-effect oscillations, equidistant in the direct magnetic field of the magnetoresistance of Bi thin cylindrical single crystals obtained by Ulitovsky technique with diameter 45 nm < d < 800 nm

Cuvinte-cheie
Aharonov-Bohm oscillations, Berry phase, Bismuth, Magnetoresistanse, Nanowire, Semimetal-to-semoconductor transformations, Surface states