Aharonov-Bohm oscillations in single crystal Bi nanowires
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
162 0
Căutarea după subiecte
similare conform CZU
621.382 (52)
Electrotehnică (1161)
SM ISO690:2012
GITSU, Dumitru, HUBER, Tito, KONOPKO, Leonid, NIKOLAEVA, Albina. Aharonov-Bohm oscillations in single crystal Bi nanowires. In: Journal of Nanoelectronics and Optoelectronics, 2009, vol. 4, pp. 124-133. ISSN 1555-130X. DOI: https://doi.org/10.1166/jno.2009.1011
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Journal of Nanoelectronics and Optoelectronics
Volumul 4 / 2009 / ISSN 1555-130X

Aharonov-Bohm oscillations in single crystal Bi nanowires

DOI:https://doi.org/10.1166/jno.2009.1011
CZU: 621.382

Pag. 124-133

Gitsu Dumitru1, Huber Tito2, Konopko Leonid13, Nikolaeva Albina13
 
1 Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova,
2 Howard University,
3 International Laboratory of High Magnetic Fields and Low Temperatures
 
 
Disponibil în IBN: 24 august 2023


Rezumat

The Aharonov-Bohm effect (AB) exists in cylindrical wires as the magnetoresistance (MR) oscillations with a period ΔS that is proportional to Φ 0/S, where Φ 0 = h/e is the flux quantum and S is the wire cross section. The AB-type longitudinal MR oscillations "flux quantization" type with period ΔS = Φ 0/S caused by electrons undergoing continuous grazing incidence at the wire wall have been studied previously at 4.2 K in single bismuth nanowires with diameter 0.2 < d < 0.8 μm. Recently the new type of AB oscillations with period ΔB = h/e and ΔB = h/2e on single Bi nanowires with diameter d = 45-73 nm have been observed. The single nanowire samples were prepared by improved Ulitovsky technique and represented cylindrical single crystals with (1011) orientation along the wire axis. Here we present a review of experimental investigations of size-effect oscillations, equidistant in the direct magnetic field of the magnetoresistance of Bi thin cylindrical single crystals obtained by Ulitovsky technique with diameter 45 nm < d < 800 nm

Cuvinte-cheie
Aharonov-Bohm oscillations, Berry phase, Bismuth, Magnetoresistanse, Nanowire, Semimetal-to-semoconductor transformations, Surface states

Dublin Core Export

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Ghiţu, D.V.</dc:creator>
<dc:creator>Huber, T.E.</dc:creator>
<dc:creator>Konopko, L.A.</dc:creator>
<dc:creator>Nikolaeva, A.A.</dc:creator>
<dc:date>2009-04-04</dc:date>
<dc:description xml:lang='en'><p>The Aharonov-Bohm effect (AB) exists in cylindrical wires as the magnetoresistance (MR) oscillations with a period &Delta;S that is proportional to &Phi;&nbsp;<sub>0</sub>/S, where &Phi;&nbsp;<sub>0</sub>&nbsp;= h/e is the flux quantum and S is the wire cross section. The AB-type longitudinal MR oscillations &quot;flux quantization&quot; type with period &Delta;S = &Phi;&nbsp;<sub>0</sub>/S caused by electrons undergoing continuous grazing incidence at the wire wall have been studied previously at 4.2 K in single bismuth nanowires with diameter 0.2 &lt; d &lt; 0.8 &mu;m. Recently the new type of AB oscillations with period &Delta;B = h/e and &Delta;B = h/2e on single Bi nanowires with diameter d = 45-73 nm have been observed. The single nanowire samples were prepared by improved Ulitovsky technique and represented cylindrical single crystals with (1011) orientation along the wire axis. Here we present a review of experimental investigations of size-effect oscillations, equidistant in the direct magnetic field of the magnetoresistance of Bi thin cylindrical single crystals obtained by Ulitovsky technique with diameter 45 nm &lt; d &lt; 800 nm</p></dc:description>
<dc:identifier>10.1166/jno.2009.1011</dc:identifier>
<dc:source>Journal of Nanoelectronics and Optoelectronics  () 124-133</dc:source>
<dc:subject>Aharonov-Bohm oscillations</dc:subject>
<dc:subject>Berry phase</dc:subject>
<dc:subject>Bismuth</dc:subject>
<dc:subject>Magnetoresistanse</dc:subject>
<dc:subject>Nanowire</dc:subject>
<dc:subject>Semimetal-to-semoconductor transformations</dc:subject>
<dc:subject>Surface states</dc:subject>
<dc:title>Aharonov-Bohm oscillations in single crystal Bi nanowires</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>