A possible mechanism of carrier multiplication (CM) in semiconductor quantum dots (QDs) as an inseparable successive creation of two and three electron-hole (e-h) pairs was considered in the frame of the second and third orders of the perturbation theory. The absorption process begins with the annihilation of the incident photon and the creation of initial virtual e-h pair (c ₁, h) consisting from electron in the excited conduction band c ₁ and a hole in the valence band ν. In the following evolution the main role in our model is played by the Coulomb scattering of the electron c ₁ interacting with another valence electron ν, which is promoted across the semiconductor band gap into the lowest conduction band c ₀ where the electrons are accumulated. In such a way the second e-h pair (c ₀, h) is created, whereas the scattered electron transfers itself in another conduction band c ₂. Such scattering is characterized by two quantum-transition dipole moments d _C1C2 and d _VCo and is equivalent to the conversion c ₁ → (c ₂, c _o, h) of one electron into the complex of three unbound particles. When the conduction band c ₂ coincides with c _o, the creation of two pairs is finished. If the electron c ₂ will be able to repeat the same scenario, the creation of three e-h pairs will take place being described in the third order of the perturbation theory and so one.