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 SM ISO690:2012ARAMĂ, Efim, GHEORGHIŢĂ, Eugen, PÎNTEA, Valentina. Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K. In: Microelectronics and Computer Science: The 6th International Conference, Ed. 6, 1-3 octombrie 2009, Chisinau. Bălți, Republica Moldova: Universitatea de Stat „Alecu Russo" din Bălţi, 2009, Ediţia 6, pp. 51-52. ISBN 978-9975-45-122-2. |
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| Microelectronics and Computer Science Ediţia 6, 2009 |
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Conferința "Microelectronics and Computer Science" 6, Chisinau, Moldova, 1-3 octombrie 2009 | ||||||
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| Pag. 51-52 | ||||||
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in this article on the describe structure spectrum of radiation polities of 2 4 ZnIn S at 80 K relative thickness of plaque. Is proposed the optical transition energy for recombination holder with unbalanced load levels specifically determined experimentally (0,11 and 0,25 eV de la Ev). On the basis of the results are interpreted. |
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| Cuvinte-cheie monocrystals, Semiconductors, optoelectronics elements, iradision dose, Sensors |
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