Antimonidul of gallium is the family of materials with semiconductor properties. It has unusual properties and is less investigated compared to other combinations. In considering the work once the radiation spectra of antimonidului of gallium dopat with different concentrations of iron in high temperature 2K in the absence of the magnetic field outside the spectral range (0.8 ÷ 0.812) eV. It highlights three patches irradiation identified as excitoni (BE1, BE2, BE3) bound to accept. Using design structure hidrogenide were calculated activation energies acceptorilor who contributed to the formation excitonilor.