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 SM ISO690:2012KOROTCHENKOV, Ghenadii. ZnSe-based photodetectors. New York: 2023, pp. 301-332. ISBN 978-303120510-1, 978-303120509-5DOI: 10.1007/978-3-031-20510-1_13 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors | ||||||
| 2 / 2023 / ISBN 978-303120510-1, 978-303120509-5 | ||||||
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| DOI:https://doi.org/10.1007/978-3-031-20510-1_13 | ||||||
| Pag. 301-332 | ||||||
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This chapter provides a comprehensive overview of recent advances in the development and fabrication of solar-blind blue-UV photodetectors based on ZnSe in various forms such as single crystals, 1D nanomaterials, epitaxial and polycrystalline films, as well as heterostructures and hybrid materials. Solar-blind blue-UV photodetectors based on wide-gap ZnSe are attractive for many applications, including UV imaging in medicine, high-speed telecommunications in free air space, air pollution monitoring, and civil applications. A summary of the basic principles of operation of photodetectors, as well as the performances of photodetectors, is given. Particular attention is paid to various design schemes of photodetectors, and photodetection mechanisms. Also, the technological approaches and designs used to manufacture high-performance photodetectors based on ZnSe are considered in detail and critically. |
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| Cuvinte-cheie 1D nanostructures, advantages, advantages, advantages, advantages, advantages, Decay of photocurrent, Diffusion "tail", Diffusion region, disadvantages, Doped NWs, GaAs substrate, graphene, Heterostructure-based photodetectors, Hybrid structures, hydrogen peroxide, Ideality factor, Implementation, Interdigital electrode, ITO, limitations, MBE, metal, Metal photodiodes, Metals, Monolithic, Nanowire-based photodetectors, nanowires, Organic, P-i-n junction photodiodes, P-n junction photodiodes, PEDOT:PSS, performances, performances, Persistent Photoconductivity, Photoconductive detector, Phototransistors, Quantum efficiency, Responsivity, Responsivity, Responsivity, Responsivity, Schottky barrier, Schottky photodiodes, semiconductor, structure, structure, Superlattice buffer layer, superlattices, UV-transparent conducting polymer, weakness, Wide-gap window, ZnMgBeSe PD, ZnSe hybrid structures, ZnSe photodetectors, ZnSe-graphene structure, ZnSSe APDs, ZnSTeSe photodiodes |
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